EC2403 RF and Microwave Engineering Premium Lecture Notes- Selvakumar Edition

[Srini]

   

Anna University , Chennai

Department of B.E-Electronics and Communication Engg

Seventh Semester

EC2403 RF and Microwave Engineering 

(Regulation 2008)

Scanned Lecture Notes (Units 1 , 2 , 4 and 5)

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Content :
RF AND MICROWAVE ENGINEERING

UNIT-1
TWO PORT NETWORK-CIRCUIT REPRESENTATION
Low frequency parameters
Z - Parameters
Y- Parameters
H – Parameters
ABCD parameters
High frequency parameters
S – Parameters
Properties of s – parameters
a. Zero diagonal elements for perfect matched network
b. Symmetry of (s) for a reciprocal network
c. Unitary property for a lossless junction
d. Phase shift property
S PARAMETER OF A TWO PORT NETWORK WITH MISMATCHED LOAD
Relationship of Z, S, ABCD parameters
SCATTERING – MATRIX FORMULATION
Transmission matrix
Wave amplitude transmission matrix
Microwave frequency range
Microwave application
Scattering matrix for a two port junction
Microwave junction
Tee junction
Directional couples
Ferrites
Circulator
Microwave isolator
Attenuator
Phase shifter
Precision phase shifter
Gyrator
Termination

UNIT-2
RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORK
Amplifier power relation
Stability consideration
Stability circles
Unconditional stability
Stabilization
Gain consideration
1. Unilateral design
2. Bilateral design
3. Operating and available power gain
Impedance matching network
Microstrip line matching network

UNIT-4
MICROWAVE SEMICONDUCTOR DEVICES
GUNN DIODES
1. Differential negative resistance theory
2. Two-valley model theory
Modes of operation
1. Gunn mode
2. Limited space charge 
3. Quenched domain mode
4. Delayed mode
Avalanche transit time devices
1. Impatt diodes
2. Mechanism of oscillation
3. Trapatt diodes
Major disadvantages  of TRAPATT
Parametric devices
1. Parametric amplification
2. Parametric oscillation
3. Parametric amplifier
Parametric up converters
a. Power gain
b. Noise figure
c. Bandwidth
Parameter domain converters
Negative resistance parameter amplifier
Application of parametric amplifier
TUNNEL DIODE
Parallel loading
Series loading
VARACTOR DIODE
Microwave transistors
1. Bipolar
2. Unipolar
Principle of operation
1. Normal mode
2. Saturation mode
3. Cut off mode
4. Inverse mode
FET
MOSFET

UNIT-5
MICROWAVE TUBES AND MEASUREMENTS
Microwave tubes
Velocity modulation
Bunching process
Output power
REFLEX RLYSTRON
Velocity modulation
Power output and efficiency
HELIX TRAVELLING WAVE TUBE
Gain characteristics
MAGNETRON
Equation of electron trajectory
Modes of magnetron
Application of magnetron
Measurement of power
1. Low power
2. Medium power
3. High power
Thermocouple sensor
Types
1. Direct heating method
2. Indirect heating method
Static calorimeter
Circulating calorimeter
MEASUREMENT OF ATTENUATION
VSWR MEASUREMENT
Measurements of impedence
Impedence measurements of reactive discontinuity
Measurement of Q
Frequency measurement of Q

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