Electronic Device Premium Lecture Notes, Prepared by Suji. Specially for Electronics and Communication Engineering. Syllabus Covered based on Anna University B.E Electronics and Communication Engineering.
CONTENT:
UNIT-1 (Pages: 22)
SEMI CONDUCTOR DEVICE
UNIT-2(Pages: 47)
BIPOLAR JUNCTION
UNIT-3(Pages: 27)
FET
UNIT-4 (Pages: 32)
SPECIAL SEMI CONDUCTOR DEVICE
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UNIT-1
SEMI CONDUCTOR DEVICE
Theory of PN junction diode
1. Forward biasing
2. Reverse biasing
Characteristics of forward bias
Characteristics of reverse bias
Energy band diagram of an open circuited PN junction
Mass action law
P-type semiconductor
Drift and diffusion diagram
1. Drift current
2. Diffusion current
Application
Avalanche breakdown
Zener breakdown
Diode current equation
Junction diode switching characteristics
UNIT-2
BIPOLAR JUNCTION
Bipolar junction transistor
Two types
1. PNP
2. NPN
Transistor biasing
Operation of NPN transistor
Operation of PNP transistor
CE,CC and CB configuration and characteristics
Types of transistor configuration
Early effect or base band modulation
Transistor parameter
1. Input impedance
2. Output admittance
3. Forward current gain
4. Reverse current gain
Hybrid model
H – Parameter model
Multi emitter transistor
Cross – section of multi – emitter bipolar npn transistor
UNIT-3
FET
Field effect transistor
JFET
P-Channel JFET
MOSFET
MOSFET construction and symbol
Types of operation of FET
N- Channel depletion mode
P- Channel depletion mode
Application of JFET
Characteristics of FET
UNIT-4
SPECIAL SEMI CONDUCTOR DEVICE
Metal semiconductor junction
Energy band diagram
Advantages
Scottky barrier diode
Construction and working
V-I characteristics
Application
Zener diode
Breakdown mechanism
Special semiconductor device
Tunnel diode
Advantages
Disadvantages
PIN diode
Application of PIN diode
VARACTOR diode
Application
Laser diode
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